发明名称 Two Transistor Ternary Random Access Memory
摘要 A two transistor ternary random access memory (TTTRAM) circuit includes an voltage/current input, an input/output switch, a first transistor, a first pull up resistor, a second transistor, and a second pull up resistor. The first transistor has a first emitter, a first collector connected to the input/output switch, and a first base. The first pull up resistor is connected to the first emitter and the voltage/current input. The second transistor has a second emitter connected to ground, a second collector, and a second base connected to the input/output switch. The second pull up resistor is connected to the first base, the second collector, and the voltage/current input.
申请公布号 US2016189762(A1) 申请公布日期 2016.06.30
申请号 US201514985259 申请日期 2015.12.30
申请人 Tsaoussis Simon Peter 发明人 Tsaoussis Simon Peter
分类号 G11C11/40 主分类号 G11C11/40
代理机构 代理人
主权项 1. A two transistor ternary random access memory (TTTRAM) circuit, comprising: a voltage/current input; an input/output switch; a first transistor having: a first emitter;a first collector connected to the input/output switch; anda first base; a first pull up resistor connected to the first emitter and to the voltage/current input; a second transistor having: a second emitter connected to ground;a second collector; anda second base connected to the input/output switch; and a second pull up resistor connected to the first base, the second collector, and the voltage/current input.
地址 Miami FL US