| 发明名称 |
SEMICONDUCTOR DEVICE FOR REDUCING AN INSTANTANEOUS VOLTAGE DROP |
| 摘要 |
A semiconductor device for reducing an instantaneous voltage drop is provided. The semiconductor device includes a first power line configured to provide a first power supply voltage and a first power transistor connected between the first power line and a first logic transistor. The first power transistor includes a first source or drain connected to the first power line, a gate receiving a power gating control signal, and a second source or drain connected to a first source or drain of the first logic transistor using a shared semiconductor junction. |
| 申请公布号 |
US2016189759(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514978904 |
申请日期 |
2015.12.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM TAE HYUNG;BAECK SANG YEOP;KIM JAE YOUNG;KIM JIN SUNG |
| 分类号 |
G11C7/12;H01L27/088;G11C8/10;H01L27/092;G11C5/06;H01L23/528;H01L27/02 |
主分类号 |
G11C7/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first power line configured to provide a first power supply voltage; and a first power transistor connected between the first power line and a first logic transistor; and the first logic transistor, wherein the first power transistor comprises: a first source or drain connected to the first power line; a second source or drain connected to a first source or drain of the first logic transistor using a shared semiconductor junction; and a gate receiving a power gating control signal. |
| 地址 |
SUWON-SI KR |
