| 摘要 |
A hetero junction solar cell includes a semiconductor substrate, a first n-type buffer layer, a second n-type buffer layer, a first amorphous silicon layer, a second amorphous silicon layer, a first TCO layer and a second TCO layer. The first n-type buffer layer and the second n-type buffer layer are formed respectively on a first surface and a second surface of the semiconductor substrate. The first amorphous silicon layer and the second amorphous silicon layer are formed respectively on the first n-type buffer layer and the second n-type buffer layer. The first TCO layer and the second TCO layer are formed respectively on the first amorphous silicon layer and the second amorphous silicon layer. |
| 主权项 |
1. A hetero-junction solar cell, comprising:
a semiconductor substrate, having a first surface and a second surface opposing to the first surface, doped by a first type semiconductor; a first n-type buffer layer, formed on the first surface, further comprising: a first n-type amorphous silicon layer, formed on the first surface, doped by an n-type semiconductor with a dopant concentration ranged from 1×1014 to 1×1016 atoms/cm3; and a second n-type amorphous silicon layer, formed on the first n-type amorphous silicon layer; a second n-type buffer layer, formed on the second surface, further comprising: a third n-type amorphous silicon layer, formed on the second surface, doped by another n-type semiconductor with a dopant concentration ranged from 1×1014 to 1×1016 atoms/cm3; and a fourth n-type amorphous silicon layer, formed on the third n-type amorphous silicon layer; a first amorphous silicon layer, formed on the first n-type buffer layer, doped by a second type semiconductor; a second amorphous silicon layer, formed on the second n-type buffer layer, doped by the first type semiconductor; a first transparent conductive oxide layer, formed on the first amorphous silicon layer; and a second transparent conductive oxide layer, formed on the second amorphous silicon layer. |
