ATOMIC LAYER DEPOSITION OF P-TYPE OXIDE SEMICONDUCTOR THIN FILMS

摘要

Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 1019/cm3. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.

主权项

1. An method of forming a thin film transistor (TFT) comprising:
providing a substrate; exposing the substrate to a pulse of a metal reactant to form an adsorbed layer of the metal reactant over the substrate; and exposing the substrate to a pulse of an oxidant to react with the adsorbed layer of the metal reactant to form a metal oxide layer, where the metal oxide layer is a tin-based (Sn-based) p-type semiconductor layer.