发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A thin film transistor substrate includes a gate electrode disposed on a base substrate, an active pattern overlapping the gate electrode, a source metal pattern comprising both a source electrode disposed on the active pattern and a drain electrode spaced apart from the source electrode, a buffer layer disposed on the source metal pattern and contacting the active pattern, a first passivation layer disposed on the buffer layer and a second passivation layer disposed on the first passivation layer. The density of hydrogen in the buffer layer is greater than the density of hydrogen in the first passivation layer and less than the density of hydrogen in the second passivation layer. |
申请公布号 |
EP3038159(A2) |
申请公布日期 |
2016.06.29 |
申请号 |
EP20150197918 |
申请日期 |
2015.12.04 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
BANG, SEOK-HWAN;KIM, HYUNG-JUN;LIM, JI-MAN |
分类号 |
H01L29/66;H01L29/786 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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