| 摘要 |
The present invention relates to a plasma deposition reactor comprising: an upper ground wherein a reacting chamber is located; and a lower ground wherein a substrate or a wafer, which is to be deposited. The reacting chamber of the upper ground comprises: a gas inlet in which gases or precursor gases mixed the gases with a vapor precursor flows into the reacting chamber; a gas outlet in which the gases or residual gases of the precursor gases flowed into the reacting chamber are discharged to the outside of the reacting chamber; a dielectric layer formed along an inner surface of the reacting chamber; a first electrode formed along an inner surface of the dielectric layer; and a second electrode which has the same dislocation with the first electrode, is located on a hollow portion of the reacting chamber and formed as a porous structure. The substrate or the wafer is placed on the lower ground. Therefore, provided is a plasma deposition reactor which is proper for a thin film manufacturing for a large area. |
