| 摘要 |
A semiconductor drive unit for controlling the on/off state of a semiconductor switching element Q0, such as a MOSFET or IGBT, and providing overvoltage protection. The semiconductor drive unit comprises a control signal output stage for supplying a control signal to the gate terminal G of the switching element, a voltage clamp circuit connected between the input terminal of the switching element and its gate terminal, and a detection circuit for detecting a voltage between the drive unit output and the gate control terminal of the switching element. Feedback may also be provided by detecting the gate control terminal current or charge. The output impedance of the control signal stage may initially be increased during the turn off period but is then lowered based on the feedback signal SF from the detection circuit, where the given comparison voltage may be set based on Vge at the end of the Miller effect period. |
