| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which can deposit a polycrystalline silicon layer so as not to promote single crystallization even when a heat treatment process is performed.SOLUTION: An SOI wafer manufacturing method by bonding via an insulation film, a bond wafer and a base wafer, each of which is composed of a silicon single crystal at least comprises: a process of forming a polycrystalline silicon layer on a bonded surface side of the base wafer; a process of forming an insulation film on at least one of a surface of the polycrystalline silicon layer and the bonded surface of the bond wafer; a process of bonding the base wafer and the bond wafer via the insulation film; and a process of thinning the bonded bond wafer to form an SOI layer, in which a wafer having resistivity of 100 &OHgr;cm and over and surface roughness of a surface where the polycrystalline silicon layer is formed is 2 nm and over is used as the base wafer. |
