| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which contains a serial resistance element of an N-type polysilicon and a P-type polysilicon, with a resistance value being stable without being affected by a potential difference from periphery.SOLUTION: A semiconductor device includes a silicon substrate 5, a LOCOS oxide film 4 formed on the silicon substrate 5, and a P-type polysilicon resistor 1 and an N-type polysilicon resistor 2 formed on the LOCOS oxide film 4. A rate of change of a resistance value caused by potential difference from periphery depends on a sheet resistance value of a polysilicon resistor, with tendency thereof being opposite (sign is opposite) for P-type and N-type. Therefore, assuming that thickness and width of polysilicon are constant, P-type and N-type polysilicon resistors are made in such a manner as a ratio in resistance value and length of them satisfies a following relational expression when there is no potential difference from periphery, and by connecting them in series, the effect caused by potential difference from periphery of the resistance value can be cancelled. |
