| 摘要 |
The embodiments of the present invention are to provide an electronic device comprising a switching device with excellent switching characteristics and reliability. To achieve this purpose, according to an embodiment of the present invention, the electronic device comprises a semiconductor memory. The semiconductor memory may comprise: a first carbon electrode; a second carbon electrode; a switching layer interposed between the first carbon electrode and the second carbon electrode; a third carbon electrode; and a variable resistance layer comprising a nitride interposed between the second carbon electrode and the third carbon electrode. According to the embodiments of the present invention, the electronic device comprising a semiconductor memory can provide a switching device with excellent switching characteristics and reliability. |
