| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and a method for manufacturing them.SOLUTION: A silicon carbide substrate 1 has a first principal plane 1A and a second principal plane 1B facing the first principal plane 1A. A region including at least one principal plane 1A and/or 1B of the first principal plane 1A and the second principal plane 1B is made from single crystal silicon carbide, and sulfur atoms exist in an amount of 60-2,000×10at/cmin one principal plane 1A or 1B and carbon atoms as impurities exist in an amount of 3-25 at%. A semiconductor device comprises an epitaxial growth layer formed on one principal plane 1A or 1B of the silicon carbide substrate 1 and an electrode formed on the epitaxial growth layer.SELECTED DRAWING: Figure 1 |
