| 摘要 |
An objective of the present invention is to provide a semiconductor device having a new structure which can maintain stored content even when no power is supplied and has no recording number limits. Provided is a semiconductor device which includes a nonvolatile memory cell having a transistor for recording, a transistor for reading made of semiconductor materials different from the transistor for recording, and a capacitor element. A recording process on the memory cell is performed by turning on the transistor for recording such that power is supplied to a node with which a source electrode (or a drain electrode) of the transistor for recording, one among electrodes of the capacitor element, and a gate electrode of the transistor for reading are electrically connected, and then turning off the transistor for recording such that a predetermined amount of charges is maintained at the node. Also, a reading potential is set to a positive value by using a p-channel transistor as the transistor for reading. |
