| 摘要 |
A substrate is mounted in a pocket part of a susceptor, and an epitaxial layer is grown on the substrate (S2); the film thickness distribution in the circumferential direction at the outer peripheral part of the epitaxial layer that has been grown is measured (S3). A filter process is performed on the film thickness distribution that has been measured, and short period components caused by facet growth are removed from the thickness distribution (S4). An angle D for the peripheral part that forms the smallest value for the film thickness distribution (long period component) after the removal of the short period components is found for the eccentricity direction of the substrate (S5). The deviation &Dgr;D from the average value for film thickness of the film thickness value at the angle D is found (S6). The deviation &Dgr;D found in S5 is converted to an eccentricity value on the basis of the relationship between the deviation &Dgr;D and the amount of eccentricity in the substrate found in advance in S1 (S7). The mounting position of the substrate is corrected on the basis of the amount of eccentricity and the eccentricity direction that have been found. Thus, a method that can simply evaluating the eccentricity in the mounting position for the substrate in a high temperature state during epitaxial growth is provided. |
