| 摘要 |
The present invention relates to a deposition source for improving the uniformity of a deposition thin film comprising: a first evaporation source which injects deposition materials in a linear way; a second evaporation source which is arranged in parallel with the first evaporation source, and injects deposition materials different from the deposition materials injected from the first evaporation source; a first evaporation source nozzle unit containing a plurality of first evaporation source nozzles formed on the first evaporation source in a radial direction; a second evaporation source nozzle unit containing a plurality of second evaporation source nozzles formed on the second evaporation source. The second evaporation source nozzles are extended to be near locations of the first evaporation source nozzles. A discharging end portion of the second evaporation source nozzles is formed to form a parallel angle with the first evaporation source nozzles, such that a deposition thin film is more uniformly formed. Therefore, the deposition source improves the quality of elements and increases the yield rate. |
