| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of improving productivity by achieving reduction in processing time.SOLUTION: A semiconductor device manufacturing method comprises: emitting laser beams L by a laser beam irradiation device 30 from one surface 10a side of a semiconductor substrate 10 by setting a light focusing point P at inside the semiconductor substrate 10 to form a modified region K; subsequently removing a region from the one surface 10a side to the modified region K and the modified region K by etching to form a trench 20 such that a width of an opening 20a of the trench 20 formed on the one surface 10a side becomes narrower than a width of an internal region formed by removing the modified region K. |
