| 摘要 |
An apparatus for manufacturing a bulk single crystal of a compound semiconductor according to the present invention is characterized in comprising: a raw material vessel which includes a cylindrical vessel outer wall, a vessel bottom surface having a first through hole at a center portion thereof, a vessel inner wall which extends upwards from the first through hole at a height lower than the vessel outer wall, and a vessel cover which encloses a top portion of the raw material vessel; a disk type medium substrate; a lift unit which lifts the medium substrate up and down; a guide frame which is made of a heat insulation material and includes a disk type vessel support on which the raw material vessel is placed, a cylindrical medium substrate guide unit which guides an up/down movement of the medium substrate, a frame outer wall which is formed to include the vessel support and the medium substrate guide unit therein, and a frame ceiling unit; upper and lower heaters which are arranged between a heat insulation wall of a heating furnace and the guide frame; an up/down separation wall which is arranged to traverse between the heat insulation wall of the heating furnace and the guide frame; a first temperature sensor which measures the temperature of an upper center portion in the raw material vessel; a second temperature sensor which measures the temperature of the upper heater; and a third temperature sensor which measures the temperature of the lower heater. According to the present invention, it is possible to obtain a high quality bulk single crystal by properly controlling sublimation and single crystal growing temperatures. Also, single crystals can be fabricated in a massive amount. |
