| 摘要 |
The purpose of the present invention is to improve device characteristics and device reliability even when a semiconductor layer is formed on a gate electrode layer, a source electrode layer, and a drain electrode layer. The semiconductor device comprises: a gate electrode layer; a gate insulation layer which is formed on the gate electrode layer; a source electrode layer and a drain electrode layer which are formed to overlap a portion of the gate electrode layer, with the gate insulation layer being disposed therebetween; and a semiconductor layer which is formed on the gate insulation layer, the source electrode layer, and the drain electrode layer. A film thickness of the gate insulation layer disposed in a region between the source electrode layer and the drain electrode layer is formed to be thinner than a film thicknesses of the gate insulation layer formed between the gate electrode layer and the source electrode layer and a film thickness of the gate insulation layer formed between the gate electrode layer and the drain electrode layer. |
