| 发明名称 |
Method For Growing A Single Crystal By Crystallizing The Single Crystal From A Float Zone |
| 摘要 |
A single crystal is grown in a float zone which is inductively heated and the crystallizing single crystal is rotated in a direction of rotation which is periodically reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms. |
| 申请公布号 |
US2016177469(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514945840 |
申请日期 |
2015.11.19 |
| 申请人 |
Siltronic AG |
发明人 |
RAMING Georg;ALTMANNSHOFER Ludwig;RATNIEKS Gundars;MOELLER Martin;MUEMMLER Frank |
| 分类号 |
C30B13/32;C30B29/06;C30B13/20 |
主分类号 |
C30B13/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for growing a single crystal, comprising crystallizing the single crystal from a float zone, the float zone being inductively heated and the crystallizing single crystal being rotated in a direction of rotation which is reversed at intervals in accordance with an alternating plan, wherein a dwell time during which the single crystal is in a state of rest because of the reversal of the direction of rotation is limited to no more than 60 ms. |
| 地址 |
Burghausen DE |
