PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF

摘要

A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

主权项

1. A plasma apparatus of processing a wafer disposed in a processing chamber disposed in a vacuum chamber using plasma formed in the processing chamber, comprising:
one window which is disposed on a side wall on one side of the vacuum chamber surrounding the processing chamber and through which light emitted from the plasma passes; another window which is disposed on another side opposite to the one window sandwiching the processing chamber and through which external light from outside of the processing chamber passes; a light receiving unit which is disposed outside of the one window and receives and detects light through the one window; a light source of the external light disposed outside of the other window; an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in another direction from each other, and reflects light in the processing chamber from the other window in yet another direction; and a detection unit which has a configuration capable of selectively transmitting each of the light having passed from the optical branching unit through the processing chamber and been received by the light receiving unit, and the light branched in the other direction and the light reflected in the other direction by the optical branching unit, and uses the light to detect the light having been emitted from the plasma and received by the light receiving unit, wherein the apparatus processes the wafer according to a condition for processing which is adjusted based on a result of the detection.