发明名称 APPARATUSES, METHODS, AND SYSTEMS FOR DENSE CIRCUITRY USING TUNNEL FIELD EFFECT TRANSISTORS
摘要 Embodiments include apparatuses, methods, and systems for a circuit to shift a voltage level. The circuit may include a first inverter that includes a first transistor coupled to pass a low voltage signal and a second inverter coupled to receive the low voltage signal. The circuit may further include a second transistor coupled to receive the low voltage signal from the second inverter to serve as a feedback device and produce a high voltage signal. In embodiments, the first transistor conducts asymmetrically to prevent crossover of the high voltage signal into the low voltage domain. A low voltage memory array is also described. In embodiments, the circuit to shift a voltage level may assist communication between a logic component including the low voltage memory array of a low voltage domain and a logic component of a high voltage domain. Additional embodiments may also be described.
申请公布号 WO2016099718(A1) 申请公布日期 2016.06.23
申请号 WO2015US60180 申请日期 2015.11.11
申请人 INTEL CORPORATION 发明人 MORRIS, DANIEL H.;AVCI, UYGAR E.;RIOS, RAFAEL;YOUNG, IAN A.
分类号 H03K19/0185 主分类号 H03K19/0185
代理机构 代理人
主权项
地址