| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device that can implement both of reduction of leak current and a broad dynamic range.SOLUTION: A solid-state image pickup device 101 has a unit pixel cell containing a photoelectric converter 111 for photoelectrically converting incident light, a charge detecting transistor 114 which is provided to a semiconductor substrate 121 to detect signal charges of the photoelectric converter 111, and a reset transistor 113 for initializing a signal voltage of the photoelectric converter 111. The photoelectric converter 111 has a pixel electrode 135, and a photoelectric conversion layer 136 disposed on the pixel electrode 135. The pixel electrode 135 is provided to the upper layer of the charge detecting transistor 114, the reset transistor 113 is provided between the charge detecting transistor 114 and the pixel electrode 135, and at least a part of the gate electrode 133 of the reset transistor 113 is located out of the pixel electrode 135 in plan view.SELECTED DRAWING: Figure 3A |
