GATE DRIVE CIRCUIT AND METHOD OF OPERATING SAME

摘要

A gate drive circuit for applying a voltage to a gate of a semiconductor switching device is disclosed. The gate drive circuit includes a gate drive controller that provides voltage commands for operating the semiconductor switching device, a plurality of primary gate resistors coupled between the gate drive controller and the semiconductor switching device, one or more secondary gate resistors connected in parallel with the primary gate resistors, a primary transistor connected in series with each of the primary gate resistors, and a secondary transistor connected in series with each of the secondary gate resistors. Further, one of the primary or secondary transistors receives the one or more voltage commands from the gate drive controller and provides one or more corresponding voltage levels to the semiconductor switching device via one of the primary or secondary gate resistors so as to control the on-off behavior of the semiconductor switching device.

主权项

1. A gate drive circuit for applying a gate voltage to a gate of a semiconductor switching device, the gate drive circuit comprising:
a gate drive controller providing one or more voltage commands for operating the semiconductor switching device; a plurality of primary gate resistors coupled between the gate drive controller and the semiconductor switching device; a plurality of secondary gate resistors connected in parallel with the primary gate resistors; a primary transistor connected in series with each of the primary gate resistors; and, one or more secondary transistors connected in parallel with the primary gate resistors, wherein one of the primary or secondary transistors receives the one or more voltage commands from the gate drive controller and provides one or more corresponding voltage levels to the semiconductor switching device so as to control the on-off behavior of the semiconductor switching device.