| 发明名称 |
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a substrate; a variable resistance element formed over the substrate; a top electrode formed over the variable resistance element; a barrier layer formed over the top electrode and including a groove; an interlayer dielectric layer formed over the substrate to have a layer structure in which the variable resistance element, the top electrode and the barrier layer are formed in the interlayer dielectric layer; and a metal wiring including a portion formed in the groove of the barrier layer. |
| 申请公布号 |
US2016181520(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514846761 |
申请日期 |
2015.09.05 |
| 申请人 |
SK hynix Inc. |
发明人 |
Park Ju-Bong |
| 分类号 |
H01L45/00;G06F3/06;G06F12/08 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor memory,
wherein the semiconductor memory comprises: a substrate; a variable resistance element formed over the substrate; a top electrode formed over the variable resistance element; a barrier layer formed over the top electrode and including a groove; an interlayer dielectric layer formed over the substrate to have a layer structure in which the variable resistance element, the top electrode and the barrier layer are formed in the interlayer dielectric layer; and a metal wiring including a portion formed in the groove of the barrier layer. |
| 地址 |
Icheon-Si KR |
