METHODS OF FORMING LOW BAND GAP SOURCE AND DRAIN STRUCTURES IN MICROELECTRONIC DEVICES

摘要

Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods/structures may include forming a source/drain region in a substrate of a device, and forming an alloy in the source/drain region, wherein the alloy comprises a material that decreases a band gap between source/drain contacts and the source/drain regions to substantially zero. The embodiments herein reduce an external parasitic resistance of the device.

主权项

1. A method of forming a device comprising:
forming source/drain regions in a device substrate; alloying the source/drain material of the source/drain regions with an alloy material to reduce its band gap to close to zero; and forming source/drain contacts to couple to the source/drain regions, wherein the small band gap of the alloyed region results in small metal contact resistance.