Bidirectional Power Switching with Bipolar Conduction and with Two Control Terminals Gated by Two Merged Transistors

摘要

Power semiconductor devices, methods, and systems, in which additional switches are added on both surfaces of a two-sided power device with bidirectional conduction. The additional switches are preferably vertical trench MOS transistors, and permit the emitter-base junction on either surface to be shunted easily.

主权项

1. A semiconductor device, comprising:
first and second emitter/collector regions, located respectively on first and second faces of a die of semiconductor material, and each doped to have a first conductivity type; wherein the die has a second conductivity type in the bulk thereof; first and second base contact regions, located respectively on the first and second faces of the die, and each doped to have the second conductivity type; first and second insulated gate electrodes which each lie in a trench, and are vertically extended alongside the first and second emitter/collector regions respectively; first and second source regions, located at the edge of the respective emitter/collector regions alongside the trench, and separated from the bulk of the wafer by the emitter/collector region; wherein the gate electrodes are capacitively coupled to selectably invert portions of the emitter/collector regions which are adjacent to a respective gate electrode; whereby the gate electrodes can turn on conduction, even if no current is passed through either base contact region, by selectably inverting the adjacent portions of the respective emitter/collector region; and whereby the gate electrode also improves the breakdown voltage between the two emitter/collector regions.