| 发明名称 |
THIN FILM TRANSISTOR AND ORGANIC LIGHT-EMITTING DISPLAY |
| 摘要 |
A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked. |
| 申请公布号 |
US2016181387(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201615054037 |
申请日期 |
2016.02.25 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim Jong-Yoon;Lee Il-Jeong;Im Choong-Youl;Kwon Do-Hyun |
| 分类号 |
H01L29/45;H01L27/12;H01L27/32;H01L29/786 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor comprising:
a substrate; an active layer formed over the substrate and comprising a silicon layer having a nitrated surface; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer through openings in the interlayer insulating layer and comprise an aluminum-nickel alloy (AlNiX) layer and an indium tin oxide (ITO) layer, which are sequentially stacked. |
| 地址 |
Yongin-City KR |
