发明名称 Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the Same
摘要 Embodiments provided herein describe systems and methods for forming semiconductor devices. A semiconductor substrate is provided. A source region and a drain region are formed on the semiconductor substrate. A gate electrode is formed between the source region and the drain region. A contact is formed above at least one of the source region and the drain region. The contact includes an insulating layer formed above the semiconductor substrate, an interface layer formed above the insulating layer, and a metallic layer formed above the interface layer. The interface layer is operable as a barrier between a material of the insulating layer and a material of the metallic layer, reduces the electrical resistance between the material of the insulating layer and the material of the metallic layer, or a combination thereof.
申请公布号 US2016181380(A1) 申请公布日期 2016.06.23
申请号 US201414576597 申请日期 2014.12.19
申请人 Intermolecular Inc. ;Global Foundries, Inc. 发明人 Joshi Amol;Barstow Sean;Besser Paul;Bodke Ashish;Bouche Guillaume;Fuchigami Nobumichi;Hong Zhendong;Koh Shaoming;Lee Albert Sanghyup;Mujumdar Salil;Pethe Abhijit;Raymond Mark Victor
分类号 H01L29/417;H01L21/285;H01L29/66;H01L21/02;H01L29/45;H01L29/78 主分类号 H01L29/417
代理机构 代理人
主权项 1. A method for forming a semiconductor device, the method comprising: providing a semiconductor substrate; forming a source region and a drain region on the semiconductor substrate; forming a gate electrode between the source region and the drain region; and forming a contact above at least one of the source region or the drain region, wherein the contact comprises an insulating layer formed above the semiconductor substrate, an interface layer formed above and directly interfacing the insulating layer, and a metallic layer formed above the interface laver,wherein the interface layer comprises at least one of titanium nitride, nitrogen-doped titanium oxide, or a combination thereof,wherein the at least one of titanium nitride, nitrogen-doped titanium oxide, or the combination thereof directly interfaces the insulating layer, andwherein the interface layer is operable as a barrier between a material of the insulating layer and a material of the metallic layer, reduces the electrical resistance between the material of the insulating layer and the material of the metallic layer, or a combination thereof.
地址 San Jose CA US