Vertical ferroelectric memory device and a method for manufacturing thereof

摘要

The disclosed technology generally relates to semiconductor devices, and more particularly to a ferroelectric memory device and a method of manufacturing and using the same. In one aspect, a vertical ferroelectric memory device includes a stack of horizontal layers formed on a semiconductor substrate, where the stack of layers includes a plurality gate electrode layers alternating with a plurality of insulating layers. A vertical structure extends vertically through the stack of horizontal layers, where the vertical structure has a vertical channel structure and a sidewall having formed thereon a vertical transition metal oxide (TMO) ferroelectric layer. A memory cell is formed at each of overlapping regions between the gate electrode layers and the vertical channel structure.

主权项

1. A vertical ferroelectric memory device, comprising:
a stack of horizontal layers formed on a semiconductor substrate, the stack of horizontal layers comprising a plurality gate electrode layers alternating with a plurality of insulating layers; and a vertical structure extending vertically through the stack of horizontal layers, the vertical structure comprising a vertical channel structure and a sidewall having formed thereon a vertical transition metal oxide (TMO) ferroelectric layer, wherein a memory cell is formed at each of overlapping regions between the gate electrode layers and the vertical channel structure.