发明名称 PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF
摘要 The present invention relates to a passive device and manufacturing method thereof. A capacitor according to the present invention includes: a capacitor thin film pattern formed on the upper surface of a substrate; a plurality of trenches formed by etching the substrate formed with the capacitor thin film pattern which defines the unit area of the capacitor; an insulation layer, which fills the trench, formed with capacitor interconnection holes for exposing the metal layers formed in the substrate and constituting the capacitor; and a plurality of capacitor electrode interconnection wires formed by filling the capacitor interconnection holes with a conductive material, wherein the lower surface of the substrate is being polished in a way that the insulation layer formed in the trenches is exposed.
申请公布号 US2016181242(A1) 申请公布日期 2016.06.23
申请号 US201514960501 申请日期 2015.12.07
申请人 Korea Electronics Technology Institute 发明人 YOOK Jong Min;KIM Jun Chul;KIM Dong Su;PARK Se Hoon;RYU Jong In;PARK Jong Chul
分类号 H01L27/07;H01L49/02 主分类号 H01L27/07
代理机构 代理人
主权项 1. A capacitor comprising: a capacitor thin film pattern formed on one surface of a substrate; a plurality of trenches formed by etching the substrate formed with the capacitor thin film pattern so as to define a unit area of the capacitor; an insulation layer, which fills the trenches, formed with a plurality of capacitor interconnection holes for exposing metal layers formed in the substrate and constituting the capacitor; and a plurality of capacitor electrode interconnection wires formed by filling the capacitor interconnection holes with a conductive material, wherein the other surface of the substrate is polished in a way that the insulation layer formed in the trenches is exposed.
地址 Seongnam-si KR