发明名称 |
PASSIVE DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
The present invention relates to a passive device and manufacturing method thereof. A capacitor according to the present invention includes: a capacitor thin film pattern formed on the upper surface of a substrate; a plurality of trenches formed by etching the substrate formed with the capacitor thin film pattern which defines the unit area of the capacitor; an insulation layer, which fills the trench, formed with capacitor interconnection holes for exposing the metal layers formed in the substrate and constituting the capacitor; and a plurality of capacitor electrode interconnection wires formed by filling the capacitor interconnection holes with a conductive material, wherein the lower surface of the substrate is being polished in a way that the insulation layer formed in the trenches is exposed. |
申请公布号 |
US2016181242(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
US201514960501 |
申请日期 |
2015.12.07 |
申请人 |
Korea Electronics Technology Institute |
发明人 |
YOOK Jong Min;KIM Jun Chul;KIM Dong Su;PARK Se Hoon;RYU Jong In;PARK Jong Chul |
分类号 |
H01L27/07;H01L49/02 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
1. A capacitor comprising:
a capacitor thin film pattern formed on one surface of a substrate; a plurality of trenches formed by etching the substrate formed with the capacitor thin film pattern so as to define a unit area of the capacitor; an insulation layer, which fills the trenches, formed with a plurality of capacitor interconnection holes for exposing metal layers formed in the substrate and constituting the capacitor; and a plurality of capacitor electrode interconnection wires formed by filling the capacitor interconnection holes with a conductive material, wherein the other surface of the substrate is polished in a way that the insulation layer formed in the trenches is exposed. |
地址 |
Seongnam-si KR |