发明名称 HEAT TREATMENT APPARATUS
摘要 A heat treatment apparatus includes: a rotation table installed in a vacuum container, the rotation table mounting a substrate in a mounting area formed in one surface side of the rotation table and revolving the substrate; a heater that heats the rotation table; a plasma processing part that generates a plasma in a plasma generation region, which is formed in the one surface side of the rotation table at a region through which the substrate passes, and processes the substrate; a temperature measurement terminal installed in the rotation table at a region, which passes through a position facing the plasma generation region when the rotation table is rotated, the temperature measurement terminal outputting a temperature measurement result of the rotation table as an electric signal; and a conductive plasma shield part installed to cover the temperature measurement terminal when viewed from the plasma generation region.
申请公布号 US2016177450(A1) 申请公布日期 2016.06.23
申请号 US201514974159 申请日期 2015.12.18
申请人 TOKYO ELECTRON LIMITED 发明人 KANNO Soichi
分类号 C23C16/513 主分类号 C23C16/513
代理机构 代理人
主权项 1. A heat treatment apparatus that performs a heat treatment with respect to a substrate, the heat treatment apparatus comprising: a rotation table installed in a vacuum container, the rotation table mounting the substrate in a mounting area formed in one surface side of the rotation table and revolving the substrate; a heater that heats the rotation table; a plasma processing part that generates a plasma in a plasma generation region, which is formed in the one surface side of the rotation table at a region through which the substrate passes, and processes the substrate; a temperature measurement terminal installed in the rotation table at a region, which passes through a position facing the plasma generation region when the rotation table is rotated, the temperature measurement terminal outputting a temperature measurement result of the rotation table as an electric signal; and a plasma shield part installed to cover the temperature measurement terminal when viewed from the plasma generation region, the plasma shield part being made of a conductor.
地址 Tokyo JP