发明名称 |
POLYCRYSTALLINE DIAMOND SINTERED/REBONDED ON CARBIDE SUBSTRATE CONTAINING LOW TUNGSTEN |
摘要 |
A method of forming a polycrystalline diamond cutting element includes assembling a diamond material, a substrate, and a source of catalyst material or infiltrant material distinct from the substrate, the source of catalyst material or infiltrant material being adjacent to the diamond material to form an assembly. The substrate includes an attachment material including a refractory metal. The assembly is subjected to a first high-pressure/high temperature condition to cause the catalyst material or infiltrant material to melt and infiltrate into the diamond material and subjected to a second high-pressure/high temperature condition to cause the attachment material to melt and infiltrate a portion of the infiltrated diamond material to bond the infiltrated diamond material to the substrate. |
申请公布号 |
WO2016099798(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
WO2015US61768 |
申请日期 |
2015.11.20 |
申请人 |
SMITH INTERNATIONAL, INC. |
发明人 |
BAO, YAHUA;WANG, FULONG;BELNAP, J. DANIEL;EYRE, RONALD K.;FANG, YI |
分类号 |
B22F3/15;B22F3/16;B22F5/00;E21B10/42 |
主分类号 |
B22F3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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