| 摘要 |
This technology pertains to: a solid-state imaging element capable of stably performing overflow from a PD, and preventing the occurrence of Qs decline and color mixing; and an electronic device. A solid-state imaging element according to one embodiment of this technology is equipped, on the light-receiving surface side inside a semiconductor substrate, with a charge-maintaining part for producing and maintaining a charge according to incident light, an OFD section from which the charge saturated by the charge-maintaining part is discharged, and a potential barrier for forming a barrier for the charge flowing from the charge-maintaining part to the OFD section. Therein, the OFD section comprises a low-concentration OFD section and a high-concentration OFD section which have different concentrations of the same type of impurity, and the high-concentration OFD section and the potential barrier are formed with an interval interposed therebetween. This technology is applicable to CMOS image sensors, for example. |
