Provided in one example is a nonvolatile memory cross-bar array. The array includes: a number of junctions formed by a number of row lines intersecting a number of column lines; a first set of controls at a first set of the junctions coupling between a first set of the row lines and a first set of the column lines; a second set of controls at a second set of the junctions coupling between a second set of the row lines and a second set of the column lines; and a current collection line to collect currents from the controls of the first set and the second set through their respective column lines and output a result current corresponding to a sum of a first dot product and a second dot product.
申请公布号
WO2016099438(A1)
申请公布日期
2016.06.23
申请号
WO2014US70266
申请日期
2014.12.15
申请人
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
发明人
GE, NING;YANG, JIANHUA;STRACHAN, JOHN PAUL;HU, MIAO