COMPOUND SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND

摘要

A semiconductor device structure comprising: a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material, wherein the layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm, wherein an effective thermal boundary resistance (TBReff) as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m2K/GW with a variation of no more than 12 m2K/GW as measured across the semiconductor device structure, and wherein the layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm2V-1s-1; and a sheet resistance of no more than 700 Ω/square.