NITRIDE-BASED TRANSISTOR HAVING DISLOCATION PREVENTING PATTERN LAYER

摘要

A nitride-based transistor according to one embodiment comprises: a first nitride-based first semiconductor pattern layer doped as a N type; a gate dielectric layer and gate electrode layer which are consecutively located on an upper surface of the first semiconductor pattern layer; a first nitride-based second semiconductor pattern layer doped as the N type located on a lower surface of the first semiconductor pattern layer; an inhibiting insulating dislocation pattern layer located on a lower part of the first semiconductor pattern layer to surround the second semiconductor pattern layer; and a first nitride-based third semiconductor pattern layer doped as the N type surrounding the inhibiting insulating dislocation pattern layer. When the nitride-based transistor is turned on, a carrier is conducted from the second semiconductor pattern layer to the third semiconductor pattern layer through a conductive channel formed within the first semiconductor pattern layer between the gate electrode layer and the inhibiting dislocation pattern layer.