发明名称 SEMICONDUCTOR DEVICE AND CURRENT LIMITING METHOD
摘要 A semiconductor device, including a main transistor configured to supply power from a power source to a load, and a current limiting device including a control transistor. The current limiting device is configured to detect that the current flowing from the main transistor is an overcurrent, and to limit the current upon determining that the current is equal to or greater than a current limit value, and an operating voltage of the control transistor is equal to or greater than a current limiting activation voltage. The current limit value is a threshold for determining whether the current is greater than an operating current of the main transistor for the load to operate in a steady state. The current limiting activation voltage is a sum of a correction voltage and a predetermined threshold voltage at the gate of the control transistor when the current rises to the current limit value.
申请公布号 US2016181792(A1) 申请公布日期 2016.06.23
申请号 US201514934744 申请日期 2015.11.06
申请人 FUJI ELECTRIC CO., LTD. 发明人 IWAMIZU Morio;TAKEUCHI Shigeyuki
分类号 H02H9/02 主分类号 H02H9/02
代理机构 代理人
主权项 1. A semiconductor device, comprising: a main transistor configured to carry out a supply of power from a power source to a load; and a current limiting device, including a control transistor that is configured to control a gate voltage of the main transistor, and that has a current limiting function for limiting a current flowing through the main transistor, wherein the current limiting device is configured to detect that the current is an overcurrent, and to activate the current limiting function, upon determining that the current is equal to or greater than a current limit value, andan operating voltage of the control transistor is equal to or greater than a current limiting activation voltage, whereinthe current limit value is a threshold for determining whether the current is greater than an operating current of the main transistor for the load to operate in a steady state, andthe current limiting activation voltage is a sum of a correction voltage and a predetermined threshold voltage at the gate of the control transistor when the current rises to the current limit value.
地址 Kawasaki-shi JP