Method For Growing Germanium Epitaxial Films

摘要

A method for growing germanium epitaxial films is disclosed. Initially, a silicon substrate is preconditioned with hydrogen gas. The temperature of the preconditioned silicon substrate is then decreased, and germane gas is flowed over the preconditioned silicon substrate to form an intrinsic germanium seed layer. Next, a mixture of germane and phosphine gases can be flowed over the intrinsic germanium seed layer to produce an n-doped germanium seed layer. Otherwise, a mixture of diborane and germane gases can be flowed over the intrinsic germanium seed laser to produce a p-doped germanium seed layer. At this point, a bulk germanium layer can be grown on top of the doped germanium seed layer.

主权项

1. A method for growing germanium epitaxial films, said method comprising:
preconditioning a silicon substrate with hydrogen gas at a first temperature; decreasing said first temperature of said preconditioned silicon substrate to a second temperature; flowing germane gas over said preconditioned silicon substrate to form an intrinsic germanium seed layer on said silicon substrate; increasing said second temperature of said preconditioned silicon substrate to a third temperature; flowing a mixture of diborane gas and germane gas over said intrinsic germanium seed layer to produce on p-doped germanium layer; and growing a bulk germanium film layer on top of said p-doped germanium layer.