SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device includes a memory cell part including a main memory unit and a redundancy memory unit, a page buffer circuit including a plurality of page buffer groups and reading data stored in the memory cell part, and a sensing circuit including a plurality of sense amplifiers corresponding to the plurality of page buffer groups, respectively, and suitable for sensing the read data, wherein the plurality of sense amplifiers perform data sensing operations in parallel in order to sense the read data.

主权项

1. A semiconductor memory device, comprising:
a main sense amplifier circuit suitable for sensing first potentials of main data lines coupled to a main cell region and outputting the first potentials to a global data line in response to first strobe signals having a first period; and a redundancy sense amplifier circuit suitable for sensing a second potential of a redundancy data line coupled to a redundancy cell region and outputting the second potential to the global data line in response to second strobe signals having a second period, wherein the second period is shorter than the first period.