| 摘要 |
A method for manufacturing a polycrystalline silicon thin film transistor comprises: forming a semiconductor material layer on a prefabricated substrate; forming an intermediate layer on the semiconductor material layer; coating a photoresist material on the intermediate layer, so as to form a photoresist layer (7), and conducting first exposure on the photoresist layer (7) by using a photomask (8); moving, relative to the photomask (8) in a preset direction, the prefabricated substrate provided with the photoresist layer (7) obtained after the first exposure processing, and conducting second exposure on the photoresist layer (7) by using the photomask (8); removing a photoresist material that is on the photoresist layer (7) and on which exposure is conducted, so as to form a photoresist area and a hollowed-out area on the photoresist layer (7), wherein the photoresist area comprises a center portion (71) and a wing portion (72), and the hollowed-out area does not comprise the photoresist material; and forming an ion lightly-doped area (11) corresponding to the wing portion (72) and forming an ion heavily-doped area (10) that corresponds to the hollowed-out area and that is used for forming a source/drain in the semiconductor material layer. The method can reduce panel manufacturing processes and reduce panel production costs when an LTPS panel is manufactured. |
