| 摘要 |
Provided is a lateral insulated-gate bipolar transistor (LIGBT), comprising a substrate (10), an anode end and a cathode end on the substrate (10), and a drift region (30) and a gate (61) located between the anode end and the cathode end. The anode end comprises a P-type buried layer (52) on the substrate (10), an N-type buffer region (54) on the P-type buried layer (52), and a P+ collector region (56) on the surface of the N-type buffer region (54). The LIGBT further comprises a trench gate adjacent to the anode end, wherein the trench gate penetrates from the surfaces of the N-type buffer region (54) and the P+ collector region (56) to the P-type buried layer (52), and the trench gate comprises an oxidation layer (51) on the inner surface of a trench and polycrystalline silicon (53) filled into the oxidation layer. Also provided is a manufacturing method for an LIGBT. When the LIGBT is switched off, a P+ region of a collector electrode and the trench gate are reversely biased, and a parasitic PMOS is switched on and is in an amplification state, and starts to extract residual minority carrier holes from the drift region, and thus the voltage resistance of a device can be controlled according to the thickness of a gate oxide, and a higher on-off speed is ensured, thereby achieving the aim of quickly switching same off. |
