发明名称 METHOD OF MANUFACTURING ORGANIC TRANSISTOR, AND ORGANIC TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing an organic transistor by which an organic transistor that indicates a high mobility can be manufactured, and to provide the organic transistor.SOLUTION: A method of manufacturing an organic transistor that comprises an organic semiconductor layer formed by using ink containing an organic semiconductor compound and solvent, includes the following steps of: forming a gate electrode on a substrate; forming a gate insulating film; forming a source electrode and a drain electrode; forming a predetermined barrier region; supplying the ink to form an ink layer that spreads in a predetermined range; and drying the ink layer to mutually couple between the source electrode and the drain electrode, and thereby, forming the organic semiconductor layer including a plurality of crystal grains extending in a predetermined direction.SELECTED DRAWING: Figure 1
申请公布号 JP2016115728(A) 申请公布日期 2016.06.23
申请号 JP20140251306 申请日期 2014.12.11
申请人 FUJIFILM CORP 发明人 ICHIKI TAKAHIKO;TOKITO SHIZUO
分类号 H01L21/336;H01L21/368;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L21/336
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