发明名称 Reconfigurable Row Dram
摘要 Technologies are generally described herein for a reconfigurable row dynamic random access memory device. The reconfigurable row may correspond to a logically addressable row, where multiple row segments can be mapped to different physical DRAM rows. In some examples, a reconfigurable row dynamic random access memory may use a row segment activator to allow memory operation access to a row segment, while maintaining the remaining part of the same row available for other memory access operations. The reconfigurable row dynamic random access memory may be operated in various modes of operation, including a pipeline mode and a burst mode.
申请公布号 US2016180916(A1) 申请公布日期 2016.06.23
申请号 US201414579239 申请日期 2014.12.22
申请人 Empire Technology Development LLC 发明人 Mekhiel Nagi
分类号 G11C11/406;G11C7/06;G11C11/408;G11C7/10;G11C11/4091 主分类号 G11C11/406
代理机构 代理人
主权项 1. A method to operate a reconfigurable row dynamic random access memory (RRDRAM) device, the method comprising: receiving a first access request for a first access to the RRDRAM device, the first access request comprising a first row address and a first column address corresponding to a first memory location in an array; precharging the array associated with the first memory location; decoding the first row address; decoding a portion of the first column address corresponding to a first row segment of the first row address; activating the first row segment; and asserting the activated first row segment to a word line to provide access to data in the first row segment.
地址 Wilmington DE US