| 发明名称 |
MEMORY DEVICE |
| 摘要 |
A memory device includes a memory bank including a plurality of word lines, and a word line controller capable of activating a first word line, which is accessed during a previous write operation, among the plurality of word lines, while activating a second word line corresponding to an input address among the plurality of word lines, during an active operation. |
| 申请公布号 |
US2016180904(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201514691303 |
申请日期 |
2015.04.20 |
| 申请人 |
SK hynix Inc. |
发明人 |
PARK Mun-Phil |
| 分类号 |
G11C8/08;G11C8/12;G11C7/00 |
主分类号 |
G11C8/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a memory bank comprising a plurality of word lines; and a word line controller capable of activating a first word line, which is accessed during a previous write operation, among the plurality of word lines, while activating a second word line corresponding to an input address among the plurality of word lines, during an active operation, when an address of the first word line and the input address are different from each other. |
| 地址 |
Gyeonggi-do KR |
