| 摘要 |
Provided is a lead-free bonding technique having both excellent heat radiation performance properties and a substrate bonding part with excellent bonding performanceproperties. A semiconductor element is bonded, using a sinter-type Ag paste, to a ceramic substrate having pure copper wiring (where the porous Ag layer has a porosity of 5% to less than 30%). Then, hydrogen reduction is performed, and the ceramic substrate is bonded to the base using an Sn-based solder having a solidus temperature equal to or greater than 227°C (fig. 8). |
