| 摘要 |
A method for blocking a portion of a longitudinal through-hole during manufacture of a semiconductor structure, comprising the steps of:
- forming a stack comprising:
o A hard mask (5) comprising at least one trench, and
o A first coating (11) filling the at least one trench and coating the hard mask, wherein the first coating comprises one or more materials that can be etched selectively with respect to a second coating,
- Etching at least one vertical via in said first coating directly above said portion of the trench in such a way as to remove the first coating over at least a fraction of the depth of the trench,
- Filling the at least one via with the second coating material (16),
- Removing the first coating selectively with respect to the second coating from at least the one or more longitudinal through-holes in such a way as to leave in place any of the first coating present directly underneath the second coating. |
