发明名称 |
センサ、方法、および半導体センサ |
摘要 |
Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique. |
申请公布号 |
JP5936250(B2) |
申请公布日期 |
2016.06.22 |
申请号 |
JP20100066291 |
申请日期 |
2010.03.23 |
申请人 |
台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd. |
发明人 |
チェン・ジ−イェン;ジェイムズ・ジィ・フィオレンツァ;カルバン・シーン;アンソニー・ジェイ・ロクテフェルド |
分类号 |
H01L31/10;H01L27/144;H01L27/146 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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