| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of an SGT (Surrounding Gate Transistor) which can decrease the number of processes necessary for manufacturing the SGT.SOLUTION: A semiconductor device comprises: a fin-shaped semiconductor layer 103 formed on a semiconductor substrate 101; a first insulation film 104 formed around the fin-shaped semiconductor layer; a columnar semiconductor layer 110 formed on the fil-shaped semiconductor layer; a gate insulation film 111 formed around the columnar semiconductor layer; a gate electrode 112a formed around the gate insulation film; gate wiring 112b which is connected to the gate electrode and extends in a second direction orthogonal to a first direction in which the fil-shaped semiconductor layer extends and is formed on a sidewall of a dummy gate 107 composed of polysilicon in a sidewall-shape; a first diffusion layer 114 formed on the columnar semiconductor layer; and a second diffusion layer 115 formed from on the fin-shaped semiconductor layer to under the columnar semiconductor layer. |
