| 摘要 |
PROBLEM TO BE SOLVED: To improve a deposition rate in an MBE device which carries out deposition by radiation with radicals using a radical source.SOLUTION: The MBE device comprises a vacuum vessel 1, a substrate stage 2 provided in the vacuum vessel 1 for holding a substrate 3 so as to be able to rotate and heat the substrate 3, molecular beam cells 4A to 4C for irradiating the surface of the substrate 3 with molecular beams (atomic beams), and a radical source 5 for supplying nitrogen radicals to the surface of the substrate 3. The radical source 5 has a feed pipe 10 including SUS and a plasma generation pipe 11 connecting to the feed pipe 10. A cylindrical CCP electrode 13 is arranged on the outside of the plasma generation pipe 11, and a coil 12 wound along the outer periphery of the plasma generation pipe 11 is provided on the downstream side of the CCP electrode 13. A parasitic plasma prevention pipe 15 including ceramic is inserted into the opening of the feed pipe 10 at the connection part of the feed pipe 10 with the plasma generation pipe 11. |
