| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which is capable of manufacturing a semiconductor device without causing deterioration in reliability, throughput, and the like.SOLUTION: The method for manufacturing a semiconductor device comprises the steps of: forming a first conductive layer 44 on one main surface of a semiconductor substrate 10; oxidizing a surface layer of the first conductive layer to form an oxide pattern 50; and polishing the first conductive layer at a polishing speed higher than that for the oxide pattern, to form a conductive pattern 44a of the first conductive layer in a region where the oxide pattern has existed. |
