发明名称 Ultra-thin embedded semiconductor device package and method of manufacturing thereof
摘要 A package structure (10) includes a first dielectric layer (14), semiconductor device(s) (12,13) attached to the first dielectric layer (14), and an embedding material (24) applied to the first dielectric layer (14) so as to embed the semiconductor device (12,13) therein, the embedding material (24) comprising one or more additional dielectric layers (26). Vias (30) are formed through the first dielectric layer (14) to the at least one semiconductor device (12,13), with metal interconnects (38) formed in the vias (30) to form electrical interconnections to the semiconductor device (12,13). Input/output (I/O) connections (40) are located on one end of the package structure (10) on one or more outward facing surfaces (18,20) thereof to provide a second level connection to an external circuit. The package structure (10) interfits with a connector on the external circuit to mount the package (10) perpendicular to the external circuit, with the I/O connections (40) being electrically connected to the connector to form the second level connection to the external circuit.
申请公布号 EP2916354(A3) 申请公布日期 2016.06.22
申请号 EP20150157300 申请日期 2015.03.03
申请人 GENERAL ELECTRIC COMPANY 发明人 GOWDA, ARUN VIRUPAKSHA;MCCONNELEE, PAUL ALAN;CHAUHAN, SHAKTI SINGH
分类号 H01L21/60;H01L23/00;H01L23/34;H01L23/538;H05K1/18 主分类号 H01L21/60
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